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Charge Transport in Low Dimensional Semiconductor Structures: The Maximum Entropy Approach
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This book offers, from both a theoretical and a computational perspective, an analysis of macroscopic mathematical models for description of charge transport in electronic devices, in particular in the presence of confining effects, such as in the double gate MOSFET.
This book offers, from both a theoretical and a computational perspective, an analysis of macroscopic mathematical models for description of charge transport in electronic devices, in particular in the presence of confining effects, such as in the double gate MOSFET.
Additional information
| Book Format | Hardcover, Softcover |
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Book information
Edition
1st Edition
ISBN [Hardcover]
9783030359928
ISBN [Softcover]
9783030359959
Publisher
Springer
Year
2020
Pages
XVI, 337 p.
Series Title
The European Consortium for Mathematics in Industry
Language
English
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